View 2SC3326_4316227.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SMD Type
Silicon NPN Epitaxial 2SC3326
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1 (typ.) (IB = 5 mA).
+0.1 1.3-0.1
Features
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
Small package.
+0.1 0.38-0.1
+0.1 0.97-0.1
High DC current gain: hFE = 200 1200.
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 20 25 300 60 150 125 -55 to +125 Unit V V V mA mA mW
0-0.1
www.kexin.com.cn
1
SMD Type
2SC3326
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Switchingtime Turn-on time Symbol ICBO IEBO hFE Testconditons VCB = 50 V, IE = 0 VEB = 25 V, IC = 0 VCE = 2 V, IC = 4 mA
Transistors IC
Min
Typ
Max 0.1 0.1
Unit iA iA
200 0.042 0.61 30 4.8 160
1200 0.1 V V MHz 7 pF ns
VCE (sat) IC = 30 mA, IB = 3 mA VBE fT Cob ton VCE = 2 V, IC = 4 mA VCE = 6 V, IC = 4 mA VCB = 10 V, IE = 0, f = 1 MHz
Storage time
tstg
500
ns
Fall time
tf
130
ns
hFE Classification
Marking Rank hFE A 200 700 CC B 350 120
2
www.kexin.com.cn

▲Up To Search▲

Price & Availability of 2SC3326

	To Download 2SC3326 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .